SiC Power TrenchMOS Transistor Under Repetitive Avalanche Stress

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Marek, J., Kozárik, J., Minárik, M., Chvála, A., Matúš, M., & Stuchlíková, L.

Journal title: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/asdam55965.2022.9966790

ISBN: 978-1-6654-6979-1