An Experimentally Validated TCAD Variability Study of the Relative Performance of In-Ga-Zn-O and Poly-Si-Channel Ferroelectric VNANDs

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Authors: M. Thesberg, Z. Stanojević, F. Schanovsky, J.M. Gonzalez-Medina, G. Rzepa, F. Mitterbauer, O. Baumgartner, M. Karner

Journal title: 2024 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2024

DOI identifier: 10.1109/IEDM50854.2024.10873461

ISSN: 2156-017X