Unveiling the high quantum efficiency of single silicon-vacancy centers through dielectric tuning of their local environment

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Authors: M. Bézard, Y. Mindarava, R. Blinder, J.-B. Trebbia, P. Tamarat, F. Jelezko, B. Lounis

Journal title: AVS Quantum Science

Journal number: 6

Journal publisher: American Vacuum Society

Published year: 2024

DOI identifier: 10.1116/5.0216709

ISSN: 2639-0213