An innovative large scale integration of silicon nanowire-based field effect transistors

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon

Journal title: Solid-State Electronics

Journal number: 143

Journal publisher: Pergamon Press Ltd.

Published year: 2018

Published pages: 97-102

DOI identifier: 10.1016/j.sse.2017.11.008

ISSN: 0038-1101