The impact of vacancy defects on CNT interconnects: From statistical atomistic study to circuit simulations

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Authors: Jaehyun Lee, Salim Berrada, Jie Liang, Toufik Sadi, Vihar P. Georgiev, Aida Todri-Sanial, Dipankar Kalita, Raphael Ramos, Hanako Okuno, Jean Dijon, Asen Asenov

Journal title: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2017

Published pages: 157-160

DOI identifier: 10.23919/SISPAD.2017.8085288

ISBN: 978-4-86348-610-2