Atoms-to-Circuits Simulation Investigation of CNT Interconnects for Next Generation CMOS Technologies.

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Authors: J. Lee, J. Liang, S. M. Amoroso, T. Sadi, L. Wang, P. Asenov, A. Pender, D. Reid, V. P. Georgiev, C. Millar, A. Todri-Sanial, and A. Asenov

Journal title: 22nd International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2017