Periodic Reporting for period 3 - CHALLENGE (3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices)

We propose a new approach to improve the quality and to reduce stress: it is necessary to modify the structure of the substrate (compliance substrate) in order to force the system to reduce the defects while increasing the thickness of the layer.Furthermore, by using the...