A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

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Authors: Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun

Journal title: Journal of Physics D: Applied Physics

Journal number: 52/34

Journal publisher: Institute of Physics Publishing

Published year: 2019

Published pages: 345103

DOI identifier: 10.1088/1361-6463/ab2859

ISSN: 0022-3727