Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

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Authors: Andrey Sarikov, Anna Marzegalli, Luca Barbisan, Massimo Zimbone, Corrado Bongiorno, Marco Mauceri, Danilo Crippa, Francesco La Via, Leo Miglio

Journal title: CrystEngComm

Journal number: 23/7

Journal publisher: Royal Society of Chemistry

Published year: 2021

Published pages: 1566-1571

DOI identifier: 10.1039/d0ce01613f

ISSN: 1466-8033