Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

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Authors: Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, Marco Mauceri, Francesco La Via

Journal title: Materials

Journal number: 13/8

Journal publisher: MDPI Open Access Publishing

Published year: 2020

Published pages: 1837

DOI identifier: 10.3390/ma13081837

ISSN: 1996-1944