Simulation of silicon-dot-based single-electron memory devices

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Authors: F. J. Klupfel, A. Burenkov, J. Lorenz

Journal title: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2016

Published pages: 237-240

DOI identifier: 10.1109/SISPAD.2016.7605191

ISBN: 978-1-5090-0818-6