ERD

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

OCCLUSION DEVICE DETACHABLE BY INFLATION OF A BALLOON

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

III-NITRIDE SEMICONDUCTOR DEVICES

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

Local defect-enhanced anodic oxidation of reformed GaN nanowires

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Tem...

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

INTERIOR TRIM COMPONENT AND METHOD OF FORMING SAME

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

SEMICONDUCTOR TEMPLATE AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

III-NITRIDE SEMICONDUCTOR DEVICES

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

III-NITRIDE SEMICONDUCTOR DEVICES

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

SEMICONDUCTOR TEMPLATE AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

Show more information

Project acronym eleGaNt

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

OCCLUSION DEVICE DETACHABLE BY INFLATION OF A BALLOON

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

INTERIOR TRIM COMPONENT AND METHOD OF FORMING SAME

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

III-NITRIDE SEMICONDUCTOR DEVICES

Project: eleGaNt

Updated at: 29-04-2024

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Project acronym eleGaNt

Periodic Reporting for period 2 - eleGaNt (The first technology enabling large-scale gallium nitride industrialisation f...

Project: eleGaNt

Updated at: 29-01-2023

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Project acronym eleGaNt

Resources

Selected filters:

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

OCCLUSION DEVICE DETACHABLE BY INFLATION OF A BALLOON

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS

III-NITRIDE SEMICONDUCTOR DEVICES

Local defect-enhanced anodic oxidation of reformed GaN nanowires

Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Tem...

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs

INTERIOR TRIM COMPONENT AND METHOD OF FORMING SAME

SEMICONDUCTOR TEMPLATE AND FABRICATION METHOD

GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS

III-NITRIDE SEMICONDUCTOR DEVICES

III-NITRIDE SEMICONDUCTOR DEVICES

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

SEMICONDUCTOR TEMPLATE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

SEMICONDUCTOR DEVICE HAVING A PLANAR III-N SEMICONDUCTOR LAYER AND FABRICATION METHOD

OCCLUSION DEVICE DETACHABLE BY INFLATION OF A BALLOON

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

INTERIOR TRIM COMPONENT AND METHOD OF FORMING SAME

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL

III-NITRIDE SEMICONDUCTOR DEVICES

Periodic Reporting for period 2 - eleGaNt (The first technology enabling large-scale gallium nitride industrialisation f...