Periodic Reporting for period 2 - CoolHEMT (Next Generation GaN Power Amplifiers)

The CoolHEMT project is designed to commercialize SweGaN’s unique gallium nitride (GaN) on silicon carbide (SiC) structure for high frequency devices. SweGaN’s technology to grow GaN on SiC enables an extremely thin structure, called QuanFINE, to be grown. It gives several...