Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

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Authors: Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, Farid Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman

Journal title: Applied Physics Letters

Journal number: 115/22

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 221601

DOI identifier: 10.1063/1.5123374

ISSN: 0003-6951