Deep levels related to the carbon antisite–vacancy pair in 4H-SiC

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Authors: Hiroki Nakane, Masashi Kato,Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son

Journal title: Journal of Applied Physics

Journal publisher: American Institute of Physics

Published year: 2021

DOI identifier: 10.1063/5.0059953

ISSN: 0003-6951