High-purity SiC sample for ensemble and single-centre experiments, including isotopical engineering

LIU will create highpurity SiC layers grown on commercial substrates These samples will have different characteristics dopant density and layer thickness for ensemble and singlecentre experiments Isotopic engineering will be used to determine the effect of 29Si 30Si and 13C on the properties of the emitters such as inhomogeneous broadening of the optical transition and the on the ESR linewidth The deliverable will contain a description of the growth procedure and first characterization results