Growth-Related Formation Mechanism of I3-Type BasalStacking Fault in Epitaxially Grown Hexagonal Ge-2H

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Authors: Laetitia Vincent,* Elham M. T. Fadaly, Charles Renard, Wouter H. J. Peeters, Marco Vettori, Federico Panciera, Daniel Bouchier, Erik P. A. M Bakkers, and Marcel A. Verheijen

Journal title: Advanced Materials Interfaces

Journal publisher: Wiley VCH

Published year: 2022

DOI identifier: 10.1002/admi.202102340

ISSN: 2196-7350