Characterization of optimized FB-DRAM for sub-14nm technological nodes

The deliverable is linked to task T2.8. It will contain the results about the characterization of advanced memory cells based on band structure engineering in the Source-Channel-Drain region will be tested according to the developed measurement techniques in T2.1 and T2.4. The fabrication of these devices will be carried out in T1.5 First electrical data will serve to demonstrate the benefit of such architecture and to feed both the simulation WP3 and the compact model development in WP4. These data will serve the TCAD based devices benchmark study which will result from WP3 (T3.6) for ultimate devices architecture. Two versions of these deliverable will be provided: a first one at M24, after the fabrication of advanced memory cells based on Si nanowires and 3D structures during the second year of REMINDER. The outputs of these deliverable will be used to improved the advanced memory cells fabricated during the third year. The characterization results on these memory cells will be collected in an upgraded version of the deliverable available in M36.