Development of new simulation tools: Multisubband Monte Carlo

Linked to T3.3. The deliverable will describe the efforts and activities developed to achieve a Multi-Subband Ensemble Monte Carlo simulator both for electrons and holes in ultrathin SOI devices in transient and stationary conditions. In particular we will focus on: - Development and implementation of new scattering models: (i) impurity scattering and remote phonon scattering for describing high k dielectrics; (ii) confinement of phonons in ultrathin semiconductor layers. - Study of the influence of technological and geometrical parameters on the carrier transport properties in realistic ultrathin FB-DRAM devices. -Benchmarking of the different FB-DRAM cells, structures and materials. Selection of the FB-DRAM cell for pragmatic implementation.