Z 2 -FET DC hysteresis: Deep understanding and preliminary model

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Authors: J. Lacord, S. Martinia, M.-S. Parihar, K. Lee, M. Bawedin, S. Cristoloveanu, Y. Taur, J.-Ch. Barbe

Journal title: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Journal publisher: IEEE

Published year: 2017

Published pages: 321-324

DOI identifier: 10.23919/sispad.2017.8085329

ISBN: 978-4-86348-610-2