3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z 2 -FETs

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: C. Navarro, S. Navarro, C. Marquez, J. L. Padilla, P. Galy, F. Gamiz

Journal title: IEEE Transactions on Electron Devices

Journal number: 66/6

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 2513-2519

DOI identifier: 10.1109/ted.2019.2912457

ISSN: 0018-9383