Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

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Authors: Santiago Navarro, Carlos Navarro, Carlos Marquez, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gamiz

Journal title: IEEE Electron Device Letters

Journal number: 40/7

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 1084-1087

DOI identifier: 10.1109/led.2019.2915118

ISSN: 0741-3106