Influence of source-drain engineering and temperature on split-capacitance characteristics of FDSOI p-i-n gated diodes

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Authors: K. R. A. Sasaki, C. Navarro, M. Bawedin, F. Andrieu, J. A. Martino, S. Cristoloveanu

Journal title: 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Journal publisher: IEEE

Published year: 2016

Published pages: 1-2

DOI identifier: 10.1109/S3S.2016.7804373

ISBN: 978-1-5090-4391-0