A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: S. Cristoloveanu, K.H. Lee, M.S. Parihar, H. El Dirani, J. Lacord, S. Martinie, C. Le Royer, J.-Ch. Barbe, X. Mescot, P. Fonteneau, Ph. Galy, F. Gamiz, C. Navarro, B. Cheng, M. Duan, F. Adamu-Lema, A. Asenov, Y. Taur, Y. Xu, Y-T. Kim, J. Wan, M. Bawedin

Journal title: Solid-State Electronics

Journal number: 143

Journal publisher: Pergamon Press Ltd.

Published year: 2018

Published pages: 10-19

DOI identifier: 10.1016/j.sse.2017.11.012

ISSN: 0038-1101