Extraction of the physics parameters needed in compact models and design

This deliverable is linked to task T2.6, and it is closely related to WP2, WP3 and WP4. The techniques developed in T2.1 will be applied to extract the parameters needed for fine tuning of compact and semi-analytical models. This deliverable will collect the results about: - Carrier lifetime: determined with the measurement setup used for retention time characterization. - Parameters of B2BT, impact ionization and bipolar transistor: temperature behaviour. - Diffusion and depletion lengths: necessary for modelling junction leakage current and retention capability. - Series resistance and carrier mobility: required for modelling the current levels and reading speed. -Short-channel effects: needed to evaluate the limits of scalability Four sets of devices will be considered along the life of the project: run0 - Devices already avaliable run1- First lot fabrication run2- Second lot fabrication run3- Third lot fabrication After each run, the physics parameters will be extracted. Therefore, the deliverable will be updated every six months, after the first version in M12.