Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

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Authors: Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet

Journal title: Applied Physics Letters

Journal number: 116/24

Journal publisher: American Institute of Physics

Published year: 2020

Published pages: 243502

DOI identifier: 10.1063/5.0007100

ISSN: 0003-6951