Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: M. Aouad, S. Martinie, F. Triozon, T. Poiroux, M. Vinet, G. Ghibaudo

Journal title: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Journal publisher: IEEE

Published year: 2020

Published pages: 1-4

DOI identifier: 10.1109/eurosoi-ulis49407.2020.9365297

ISBN: 978-1-7281-8765-5