Cryogenic MOS Transistor Model

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Authors: Arnout Beckers, Farzan Jazaeri, Christian Enz

Journal title: IEEE Transactions on Electron Devices

Journal number: 65/9

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2018

Published pages: 3617-3625

DOI identifier: 10.1109/TED.2018.2854701

ISSN: 0018-9383