Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

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Authors: H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Casse, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer

Journal title: IEEE Electron Device Letters

Journal number: 40/5

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 784-787

DOI identifier: 10.1109/led.2019.2903111

ISSN: 0741-3106