Highly selective dry etching of GaP in the presence of Al x Ga 1–x P with a SiCl 4 /SF 6 plasma

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Authors: Simon Hönl, Herwig Hahn, Yannick Baumgartner, Lukas Czornomaz, Paul Seidler

Journal title: Journal of Physics D: Applied Physics

Journal number: 51/18

Journal publisher: Institute of Physics Publishing

Published year: 2018

Published pages: 185203

DOI identifier: 10.1088/1361-6463/aab8b7

ISSN: 0022-3727