First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

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Authors: V. Deshpande, V. Djara, E. O'Connor, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine, P. Hashemi, K. Balakrishnan

Journal title: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Journal number: Yearly

Journal publisher: IEEE

Published year: 2016

Published pages: 127-130

DOI identifier: 10.1109/ULIS.2016.7440069

ISBN: 978-1-4673-8609-8