Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson

Journal title: IEEE Electron Device Letters

Journal number: Volume:PP Issue: 99 

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2016

Published pages: 1-1

DOI identifier: 10.1109/LED.2016.2581918

ISSN: 0741-3106