Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Martin Berg, Karl-Magnus Persson, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson

Journal title: 2015 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2015

Published pages: 31.2.1-31.2.4

DOI identifier: 10.1109/IEDM.2015.7409806

ISBN: 978-1-4673-9894-7