Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grown p-Ga0.7In0.3Sb (100) and thermal atomic layer deposited (ALD) Al2O3

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Authors: Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I.

Journal title: WoDIM

Journal number: Yearly; Session 4: III-V FETs

Journal publisher: http://wodim2016.imm.cnr.it/index.asp?cont=program

Published year: 2016

Published pages: N/A