Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si

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Authors: Olli-Pekka Kilpi, Johannes Svensson, Lars-Erik Wernersson

Journal title: 2017 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2017

Published pages: 17.3.1-17.3.4

DOI identifier: 10.1109/iedm.2017.8268408

ISBN: 978-1-5386-3559-9