Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

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Authors: Jun Lin, Scott Monaghan, Karim Cherkaoui, Ian M. Povey, Brendan Sheehan, Paul K. Hurley

Journal title: Microelectronic Engineering

Journal number: 178

Journal publisher: Elsevier BV

Published year: 2017

Published pages: 204-208

DOI identifier: 10.1016/j.mee.2017.05.020

ISSN: 0167-9317