A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

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Authors: H. Hahn, V. Deshpande, E. Caruso, S. Sant, E. O'Connor, Y. Baumgartner, M. Sousa, D. Caimi, A. Olziersky, P. Palestri, L. Selmi, A. Schenk, L. Czornomaz

Journal title: 2017 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2017

Published pages: 17.5.1-17.5.4

DOI identifier: 10.1109/iedm.2017.8268410

ISBN: 978-1-5386-3559-9