High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications

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Authors: C. B. Zota, C. Convertino, Y. Baumgartner, M. Sousa, D. Caimi, L. Czornomaz

Journal title: 2018 IEEE International Electron Devices Meeting (IEDM)

Journal publisher: IEEE

Published year: 2018

Published pages: 39.4.1-39.4.4

DOI identifier: 10.1109/iedm.2018.8614530

ISBN: 978-1-7281-1987-8