High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths

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Authors: Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten Moselund, Lukas Czornomaz

Journal title: IEEE Electron Device Letters

Journal number: 40/4

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2019

Published pages: 538-541

DOI identifier: 10.1109/led.2019.2902519

ISSN: 0741-3106