Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I<inf>on</inf> = 330 μA/μm at I<inf>off</inf> = 100 nA/μm and V<inf>D</inf> = 0.5 V

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Authors: Olli-Pekka Kilpi, Jun Wu, Johannes Svensson, Erik Lind, Lars-Erik Wernersson

Journal title: 2017 Symposium on VLSI Technology

Journal publisher: IEEE

Published year: 2017

Published pages: T36-T37

DOI identifier: 10.23919/vlsit.2017.7998191

ISBN: 978-4-86348-605-8