DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration

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Authors: V. Deshpande, V. Djara, E. O'Connor, P. Hashemi, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine

Journal title: Solid-State Electronics

Journal number: 128

Journal publisher: Pergamon Press Ltd.

Published year: 2017

Published pages: 87-91

DOI identifier: 10.1016/j.sse.2016.10.034

ISSN: 0038-1101