Inversion in the In 0.53 Ga 0.47 As metal-oxide-semiconductor system: Impact of the In 0.53 Ga 0.47 As doping concentration

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Authors: É. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I. M. Povey, P. K. Hurley

Journal title: Applied Physics Letters

Journal number: 110/3

Journal publisher: American Institute of Physics

Published year: 2017

Published pages: 032902

DOI identifier: 10.1063/1.4973971

ISSN: 0003-6951