InGaAs nanowire MOSFETs with I<inf>ON</inf> = 555 µA/µm at I<inf>OFF</inf> = 100 nA/µm and V<inf>DD</inf> = 0.5 V

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Authors: Cezar B. Zota, Fredrik Lindelow, Lars-Erik Wernersson, Erik Lind

Journal title: 2016 IEEE Symposium on VLSI Technology

Journal number: Yearly

Journal publisher: IEEE

Published year: 2016

Published pages: 1-2

DOI identifier: 10.1109/VLSIT.2016.7573418

ISBN: 978-1-5090-0638-0