3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

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Authors: Kyrylo Melnyk, Arne Benjamin Renz, Qinze Cao, Peter Michael Gammon, Neophytos Lophitis, Luca Maresca, Andrea Irace, Iulian Nistor, Munaf Rahimo, Marina Antoniou

Journal title: IEEE Transactions on Electron Devices

Journal number: 71

Journal publisher: Institute of Electrical and Electronics Engineers (IEEE)

Published year: 2024

DOI identifier: 10.1109/TED.2024.3435181

ISSN: 0018-9383