4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

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Authors: Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte

Journal title: Materials

Journal number: 17

Journal publisher: MDPI AG

Published year: 2024

DOI identifier: 10.3390/ma17081908

ISSN: 1996-1944