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Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on ...

Project: InRel-NPower

Updated at: 29-04-2024

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DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate re...

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

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Updated at: 29-04-2024

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Project acronym InRel-NPower

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

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Updated at: 29-04-2024

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OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redi...

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Project: InRel-NPower

Updated at: 29-04-2024

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Vertical breakdown of GaN on Si due to V-pits

Project: InRel-NPower

Updated at: 29-04-2024

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Project: InRel-NPower

Updated at: 29-04-2024

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Project: InRel-NPower

Updated at: 29-04-2024

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Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostru...

Project: InRel-NPower

Updated at: 29-04-2024

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Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

Project: InRel-NPower

Updated at: 29-04-2024

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The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Project: InRel-NPower

Updated at: 29-04-2024

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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applicat...

Project: InRel-NPower

Updated at: 29-04-2024

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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

Project: InRel-NPower

Updated at: 29-04-2024

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CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Ca...

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based hetero...

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Project: InRel-NPower

Updated at: 29-04-2024

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Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

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Updated at: 29-04-2024

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GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Project: InRel-NPower

Updated at: 29-04-2024

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Project: InRel-NPower

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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

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Updated at: 29-04-2024

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III-V semiconductor device and method therefor

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PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION

Project: InRel-NPower

Updated at: 29-04-2024

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Project acronym InRel-NPower

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Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on ...

DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1¯) metalorganic vapor phase epitaxy

GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate re...

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping

OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redi...

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Vertical breakdown of GaN on Si due to V-pits

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostru...

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applicat...

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Ca...

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based hetero...

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current

Web site

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

III-V semiconductor device and method therefor

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION